ICPS 2024

Tu-S4-4

Tracks

Track 4

Tuesday, July 30, 2024

10:30 AM - 12:00 PM

204

Overview

2. Wide-bandgap semiconductors (GaN, SiC, Ga2O3, BN, Diamond).

Session Details

10.30-10.45 - Jazizadeh (Abs#151) 10.45-11.00 - Boucaud (Abs#67) 11.00-11.30 - INVITED: Skierbiszewski 11.30-11.45 - Xue (Abs#116) 11.45-12.00 - TBC

Speaker(s)

Dr. Czeslaw Skierbiszewski

Institute Of High Pressure Physics Pas

Tunnel Junctions for New Architecture of Nitride Devices

PDF Abstract

Dr Philippe Boucaud

CNRS/CRHEA

Intrinsic Polarity Inversion in III-Nitride Semiconductors for Efficient Nonlinear Interactions

PDF Abstract

Dr. Hao Xue

National Research Council Of Canada (nrc)

Modeling Gate Leakage Current of 0.5 μm GaN HEMTs Operating at 500 °C for RF Applications

PDF Abstract

Mr. Behzad Jazizadeh

University of Warwick

In–situ Strain Control in Epitaxial Silicon Carbide Compound Semiconductor

PDF Abstract

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